Two-dimensional materials (2DMs) are considered as prime candidates for significantly extending the functionality of silicon chips, referred to as ‘CMOS + X’. The good agreement with the predictions of a theoretical analysis underlines the potential of this hybrid system for emerging electronic applications. The charge injection induces a band gap in the adsorbed graphene layer of about (73 ± 3) meV at the Dirac point. Weak hydrogen bonds formed between the hydroxylated sapphire surface and the π-electron system of SLG result in a clean interface. In contrast, adsorption of CVD SLG on the hydroxyl-terminated α-Al 2O 3 (0001) terraces results in a superstructure with a periodicity of (2.66 ± 0.03) nm. Regions near the sapphire step edges show tiny wrinkles with a height of about 0.2 nm, framed by delaminated graphene as identified by the typical Dirac cone of free graphene. By applying a comprehensive analysis approach, distinct interactions at the graphene-sapphire interface and local variations caused by the substrate topography are revealed. Metal-free chemical vapor deposition (CVD) of single-layer graphene (SLG) on c-plane sapphire has recently been demonstrated for wafer diameters of up to 300 mm, and the high quality of the SLG layers is generally characterized by integral methods.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |